High-Performance Gate-All-Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels
Highlights A high-density array of orderly silicon nanowires (SiNWs) was grown in precise locations, with diameter of D NW = 22.4 ± 2.4 nm and interwire spacing of 90 nm. A special suspension-contact protocol has been developed to reliably suspend the in-plane solid-liquid-solid SiNWs to serve as ul...
में बचाया:
| मुख्य लेखकों: | , , , , , , |
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| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
SpringerOpen
2025-02-01
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| श्रृंखला: | Nano-Micro Letters |
| विषय: | |
| ऑनलाइन पहुंच: | https://doi.org/10.1007/s40820-025-01674-8 |
| टैग: |
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