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High-Performance Gate-All-Around Field Effect Transistors Based on Orderly Arrays of Catalytic Si Nanowire Channels

Highlights A high-density array of orderly silicon nanowires (SiNWs) was grown in precise locations, with diameter of D NW = 22.4 ± 2.4 nm and interwire spacing of 90 nm. A special suspension-contact protocol has been developed to reliably suspend the in-plane solid-liquid-solid SiNWs to serve as ul...

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Principais autores: Wei Liao, Wentao Qian, Junyang An, Lei Liang, Zhiyan Hu, Junzhuan Wang, Linwei Yu
Format: Artigo
Sprog:Inglês
Udgivet: SpringerOpen 2025-02-01
Serier:Nano-Micro Letters
Fag:
In-plane solid-liquid-solid
Ultrathin silicon nanowires
Gate-all-around field-effect transistors (GAA-FETs)
Online adgang:https://doi.org/10.1007/s40820-025-01674-8
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