Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study
Abstract This study presents a gate-all-around InAs–Si vertical tunnel field-effect transistor with a triple metal gate (VTG-TFET). We obtained improved switching characteristics for the proposed design because of the improved electrostatic control on the channel and the narrow bandgap source. It sh...
保存先:
| 主要な著者: | , |
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| フォーマット: | Artigo |
| 言語: | Inglês |
| 出版事項: |
Springer
2023-03-01
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| シリーズ: | Discover Nano |
| 主題: | |
| オンライン･アクセス: | https://doi.org/10.1186/s11671-023-03816-6 |
| タグ: |
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