Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study
Abstract This study presents a gate-all-around InAs–Si vertical tunnel field-effect transistor with a triple metal gate (VTG-TFET). We obtained improved switching characteristics for the proposed design because of the improved electrostatic control on the channel and the narrow bandgap source. It sh...
Збережено в:
| Автори: | , |
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| Формат: | Artigo |
| Мова: | Inglês |
| Опубліковано: |
Springer
2023-03-01
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| Серія: | Discover Nano |
| Предмети: | |
| Онлайн доступ: | https://doi.org/10.1186/s11671-023-03816-6 |
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