Design and Evaluation of High-Speed Overcurrent and Short-Circuit Detection Circuits With High Noise Margin for WBG Power Semiconductor Devices

Currently, wide bandgap (WBG) power semiconductor devices such as low-resistance SiC MOSFETs and GaN HEMTs are being utilized extensively to achieve high efficiency. However, securing a sufficient margin voltage between the drain–source sensing voltage and the trigger voltage of the device un...

Full description

Bibliographic Details

Main Authors:	Hae-Chan Park, Myeong-Jun Cha, Seon-Ho Jeon, Rae-Young Kim
Format:	Artigo
Language:	Inglês
Published:	IEEE 2024-01-01
Series:	IEEE Access
Subjects:	Wide bandgap (WBG) device under test (DUT) SiC MOSFETs GaN HEMTs double pulse test (DPT) fault under load (FUL)
Online Access:	https://ieeexplore.ieee.org/document/10385085/
Tags:	Add Tag No Tags, Be the first to tag this record!