Design and Evaluation of High-Speed Overcurrent and Short-Circuit Detection Circuits With High Noise Margin for WBG Power Semiconductor Devices

Currently, wide bandgap (WBG) power semiconductor devices such as low-resistance SiC MOSFETs and GaN HEMTs are being utilized extensively to achieve high efficiency. However, securing a sufficient margin voltage between the drain–source sensing voltage and the trigger voltage of the device un...

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Bibliografische gegevens

Hoofdauteurs:	Hae-Chan Park, Myeong-Jun Cha, Seon-Ho Jeon, Rae-Young Kim
Formaat:	Artigo
Taal:	Inglês
Gepubliceerd in:	IEEE 2024-01-01
Reeks:	IEEE Access
Onderwerpen:	Wide bandgap (WBG) device under test (DUT) SiC MOSFETs GaN HEMTs double pulse test (DPT) fault under load (FUL)
Online toegang:	https://ieeexplore.ieee.org/document/10385085/
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