Ultra-Low Power High Temperature and Radiation Hard Complementary Metal-Oxide-Semiconductor (CMOS) Silicon-on-Insulator (SOI) Voltage Reference

This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (...

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Bibliografiske detaljer

Principais autores:	El Hafed Boufouss, Laurent A. Francis, Valeriya Kilchytska, Pierre Gérard, Pascal Simon, Denis Flandre
Format:	Artigo
Sprog:	Inglês
Udgivet:	MDPI AG 2013-12-01
Serier:	Sensors
Fag:	biomedical high temperature CMOS subthreshold regime total ionized dose ultra-low power voltage reference
Online adgang:	http://www.mdpi.com/1424-8220/13/12/17265
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