Self-Heating in FDSOI UTBB MOSFETs at Cryogenic Temperatures and its Effect on Analog Figures of Merit
This work studies the self-heating (SH) effect in ultra-thin body ultra-thin buried oxide (UTBB) FDSOI MOSFETs at cryogenic temperatures down to 77 K. S-parameter measurements in a wide frequency range, with the so-called RF technique, are employed to assess SH parameters and related variation of an...
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| Asıl Yazarlar: | , , , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
IEEE
2020-01-01
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| Seri Bilgileri: | IEEE Journal of the Electron Devices Society |
| Konular: | |
| Online Erişim: | https://ieeexplore.ieee.org/document/9107227/ |
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