Characterization of 22 nm FDSOI nMOSFETs With Different Backplane Doping at Cryogenic Temperature
In this work, the electrostatic and radio frequency performances of 22 nm FDSOI nMOSFETs with p-type or n-type doped backplane (BP, highly doped layer of silicon below thin buried oxide) at cryogenic temperatures have been investigated. Greater enhancement of drain current <inline-formula> <tex-math...
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| Principais autores: | , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
IEEE
2021-01-01
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| coleção: | IEEE Journal of the Electron Devices Society |
| Assuntos: | |
| Acesso em linha: | https://ieeexplore.ieee.org/document/9582809/ |
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