28-nm FDSOI nMOSFET RF Figures of Merits and Parasitic Elements Extraction at Cryogenic Temperature Down to 77 K
This paper presents detailed RF characterization of 28-nm FDSOI nMOSFETs at cryogenic temperatures down to 77 K. Two main RF figures of merit (FoM), i.e., current gain cutoff frequency (f<sub>T</sub>) and maximum oscillation frequency (f<sub>max</sub>), as well as elements of small-signal equivalent...
I tiakina i:
| Ngā kaituhi matua: | , , , , , |
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| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
IEEE
2019-01-01
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| Rangatū: | IEEE Journal of the Electron Devices Society |
| Ngā marau: | |
| Urunga tuihono: | https://ieeexplore.ieee.org/document/8672466/ |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
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