Total Ionizing Dose Effects on the Threshold Voltage of GaN Cascode Devices

GaN devices are nowadays attracting global attention due to their outstanding performance in high voltage, high frequency, and anti-radiation ability. Research on total ionizing dose and annealing effects on E-mode GaN Cascode devices has been carried out. The Cascode device consists of a low-voltag...

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Principais autores:	Hao Wu, Xiaojun Fu, Jun Luo, Manlin Yang, Xiaoyu Yang, Wei Huang, Huan Zhang, Fan Xiang, Yang Pu, Ziwei Wang
Formato:	Artigo
Idioma:	Inglês
Publicado:	MDPI AG 2023-09-01
Series:	Micromachines
Assuntos:	GaN MISHEMT device Cascode device total ionizing dose effect threshold voltage shift
Acceso en liña:	https://www.mdpi.com/2072-666X/14/10/1832
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