Drift-Diffusion Model parameterS Optimization
A new approach of nanoscale MOSFETs electrical characteristics calculating, the essence of which is the use of correction factors, as well as such values of classic drift-diffusion models, which would effectively take into account the quantum-mechanical transport mechanisms is proposed. Modified dir...
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| Autori principali: | , , |
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| Natura: | Artigo |
| Lingua: | Russo |
| Pubblicazione: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Serie: | Доклады Белорусского государственного университета информатики и радиоэлектроники |
| Soggetti: | |
| Accesso online: | https://doklady.bsuir.by/jour/article/view/385 |
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