27 TECHNOLOGY AND DEVICE NANOSCALE MOSFETS SIMULATION
Current-voltage characteristics of MOSFET are obtained by computer simulation and their analysis is performed. The inadequacy of the classical models for simulation of nanoscale structures is revealed, as well as the unsuitability methods of direct quantum description for studies requiring a large n...
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| Asıl Yazarlar: | , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Russo |
| Baskı/Yayın Bilgisi: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Seri Bilgileri: | Доклады Белорусского государственного университета информатики и радиоэлектроники |
| Konular: | |
| Online Erişim: | https://doklady.bsuir.by/jour/article/view/370 |
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