Drift-Diffusion Model parameterS Optimization
A new approach of nanoscale MOSFETs electrical characteristics calculating, the essence of which is the use of correction factors, as well as such values of classic drift-diffusion models, which would effectively take into account the quantum-mechanical transport mechanisms is proposed. Modified dir...
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| Autors principals: | , , |
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| Format: | Artigo |
| Idioma: | Russo |
| Publicat: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Col·lecció: | Доклады Белорусского государственного университета информатики и радиоэлектроники |
| Matèries: | |
| Accés en línia: | https://doklady.bsuir.by/jour/article/view/385 |
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