Enhanced Dielectric Constant by Al Gradient Doping on Atomic‐Layer‐Deposited HfO2‐Based Metal–Insulator–Metal Capacitor

ABSTRACT As industries increasingly demand larger data capacities and faster processing, enhancing the capacitance of metal–insulator–metal (MIM) capacitors becomes crucial. This study investigates the effect of aluminum (Al) gradient doping on the dielectric constant of HfO2‐based MIM capacitors. C...

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Номзүйн дэлгэрэнгүй

Үндсэн зохиолчид:	Taelim Lee, Jungwoo Bong, Hyunjin Lee, Ho‐Sung Lee, Hyeon‐Sik Jang, Hee‐Tae Kim, Jae‐Hyun Lee, Byung Jin Cho, Yeon‐Ho Choi, Hagyoul Bae, Taehwan Moon, Keun Heo
Формат:	Artigo
Хэл сонгох:	Inglês
Хэвлэсэн:	Wiley-VCH 2026-02-01
Цуврал:	Advanced Electronic Materials
Нөхцлүүд:	Al gradient doping atomic layer deposition dielectric constant HfO2 tetragonal
Онлайн хандалт:	https://doi.org/10.1002/aelm.202500679
Шошгууд:	Шошго нэмэх Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!