Enhanced Operational Characteristics Attained by Applying HfO₂ as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study

This study investigates the operating characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) by applying HfO₂ as the passivation layer. Before analyzing HEMTs with various passivation structures, modeling parameters were derived from the measured data of fabricated HEMT w...

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Váldodahkkit:	Jun-Hyeok Choi, Woo-Seok Kang, Dohyung Kim, Ji-Hun Kim, Jun-Ho Lee, Kyeong-Yong Kim, Byoung-Gue Min, Dong Min Kang, Hyun-Seok Kim
Materiálatiipa:	Artigo
Giella:	Inglês
Almmustuhtton:	MDPI AG 2023-05-01
Ráidu:	Micromachines
Fáttát:	AlGaN/GaN high-electron-mobility transistor passivation HfO<sub>2</sub>
Liŋkkat:	https://www.mdpi.com/2072-666X/14/6/1101
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