Enhanced Operational Characteristics Attained by Applying HfO₂ as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study

This study investigates the operating characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) by applying HfO₂ as the passivation layer. Before analyzing HEMTs with various passivation structures, modeling parameters were derived from the measured data of fabricated HEMT w...

पूर्ण विवरण

ग्रंथसूची विवरण

मुख्य लेखकों:	Jun-Hyeok Choi, Woo-Seok Kang, Dohyung Kim, Ji-Hun Kim, Jun-Ho Lee, Kyeong-Yong Kim, Byoung-Gue Min, Dong Min Kang, Hyun-Seok Kim
स्वरूप:	Artigo
भाषा:	Inglês
प्रकाशित:	MDPI AG 2023-05-01
श्रृंखला:	Micromachines
विषय:	AlGaN/GaN high-electron-mobility transistor passivation HfO<sub>2</sub>
ऑनलाइन पहुंच:	https://www.mdpi.com/2072-666X/14/6/1101
टैग:	टैग जोड़ें कोई टैग नहीं, इस रिकॉर्ड को टैग करने वाले पहले व्यक्ति बनें!