Enhanced Dielectric Constant by Al Gradient Doping on Atomic‐Layer‐Deposited HfO2‐Based Metal–Insulator–Metal Capacitor
ABSTRACT As industries increasingly demand larger data capacities and faster processing, enhancing the capacitance of metal–insulator–metal (MIM) capacitors becomes crucial. This study investigates the effect of aluminum (Al) gradient doping on the dielectric constant of HfO2‐based MIM capacitors. C...
Sábháilte in:
| Príomhchruthaitheoirí: | , , , , , , , , , , , |
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| Formáid: | Artigo |
| Teanga: | Inglês |
| Foilsithe / Cruthaithe: |
Wiley-VCH
2026-02-01
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| Sraith: | Advanced Electronic Materials |
| Ábhair: | |
| Rochtain ar líne: | https://doi.org/10.1002/aelm.202500679 |
| Clibeanna: |
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