Experimental Investigation on Ablation of 4H-SiC by Infrared Femtosecond Laser
Femtosecond laser ablation has become one of the important structural processing methods for the third-generation semiconductor material, silicon carbide (SiC), and it is gradually being employed in the manufacture of microelectromechanical systems and microelectronic devices. Experimental study has...
Gorde:
| Egile Nagusiak: | , , , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
MDPI AG
2022-08-01
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| Saila: | Micromachines |
| Gaiak: | |
| Sarrera elektronikoa: | https://www.mdpi.com/2072-666X/13/8/1291 |
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