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Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser

The physical properties of silicon carbide (SiC) are excellent as a third-generation semiconductor. Nevertheless, diamond wire cutting has many drawbacks, including high loss, long cutting time and prolonged processing time. The study of 4H-SiC wafer slicing by using an ultrafast laser is hopeful fo...

Ausführliche Beschreibung

Gespeichert in:
Hauptverfasser: Hanwen Wang, Qiu Chen, Yongping Yao, Linlin Che, Baitao Zhang, Hongkun Nie, Rongkun Wang
Format: Artigo
Sprache:Inglês
Veröffentlicht: MDPI AG 2022-12-01
Schriftenreihe:Crystals
Schlagworte:
silicon carbide
ultrafast laser
surface processing
Online-Zugang:https://www.mdpi.com/2073-4352/13/1/15
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