Influence of Surface Preprocessing on 4H-SiC Wafer Slicing by Using Ultrafast Laser
The physical properties of silicon carbide (SiC) are excellent as a third-generation semiconductor. Nevertheless, diamond wire cutting has many drawbacks, including high loss, long cutting time and prolonged processing time. The study of 4H-SiC wafer slicing by using an ultrafast laser is hopeful fo...
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| Asıl Yazarlar: | , , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
MDPI AG
2022-12-01
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| Seri Bilgileri: | Crystals |
| Konular: | |
| Online Erişim: | https://www.mdpi.com/2073-4352/13/1/15 |
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