Código QR (código de barras bidimensional)

A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al<sub>2</sub>O<sub>3</sub> Gate Stacks

In this paper, the degradation behaviors of the ferroelectric gate Gallium nitride (GaN) high electron mobility transistor (HEMT) under positive gate bias stress are discussed. Devices with a gate dielectric that consists of pure Pb(Zr,Ti)O<sub>3</sub> (PZT) and a composite PZT/Al<sub>2</sub>O<sub>3...

Fuld beskrivelse

Na minha lista:
Principais autores: Lixiang Chen, Zhiqi Lu, Chaowei Fu, Ziqiang Bi, Miaoling Que, Jiawei Sun, Yunfei Sun
Format: Artigo
Sprog:Inglês
Udgivet: MDPI AG 2024-01-01
Serier:Micromachines
Fag:
GaN
MIS-HEMT
ferroelectric
reliability
traps
Online adgang:https://www.mdpi.com/2072-666X/15/1/101
Tags: Tilføj Tag
Ingen Tags, Vær først til at tagge denne postø!

Lignende værker