A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al₂O₃ Gate Stacks

In this paper, the degradation behaviors of the ferroelectric gate Gallium nitride (GaN) high electron mobility transistor (HEMT) under positive gate bias stress are discussed. Devices with a gate dielectric that consists of pure Pb(Zr,Ti)O₃ (PZT) and a composite PZT/Al₂O<sub>3...

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Autores principales:	Lixiang Chen, Zhiqi Lu, Chaowei Fu, Ziqiang Bi, Miaoling Que, Jiawei Sun, Yunfei Sun
Formato:	Artigo
Lenguaje:	Inglês
Publicado:	MDPI AG 2024-01-01
Colección:	Micromachines
Materias:	GaN MIS-HEMT ferroelectric reliability traps
Acceso en línea:	https://www.mdpi.com/2072-666X/15/1/101
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