Understanding Reliability Trade-Offs in 1T-nC and 2T-nC FeRAM Designs

Ferroelectric random access memory (FeRAM) is a promising candidate for energy-efficient nonvolatile memory, particularly for logic-in-memory and compute-in-memory (CIM) applications. Among the available cell architectures, One-Transistor–n-Capacitor (1T-nC) and two-transistor–n-capaci...

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主要な著者:	Sadik Yasir Tauki, Rudra Biswas, Rakesh Acharya, Jiahui Duan, Rajiv Joshi, Kai Ni, Vijaykrishnan Narayanan
フォーマット:	Artigo
言語:	Inglês
出版事項:	IEEE 2025-01-01
シリーズ:	IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
主題:	Compute-in-memory (CIM) destructive readout ferroelectric random access memory (FeRAM) floating node (FN) FN-discharge (FND) scheme one-transistor–n-capacitor (1T-nC)
オンライン･アクセス:	https://ieeexplore.ieee.org/document/11197534/
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