InGaN-based blue resonant cavity micro-LEDs with staggered multiple quantum wells enabling full-color and low-crosstalk micro-LED displays

Herein, we proposed a unique structural design for indium gallium nitride (InGaN) based blue resonant cavity micro-light-emitting diodes (RC-μ-LEDs), focusing on the design, fabrication, and the relevant performance analyses. The proposed RC-μ-LEDs possess a three-layer staggered InGaN/GaN multiple...

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Auteurs principaux:	Wei-Ta Huang, Tzu-Yi Lee, Yi-Hong Bai, Hsiang-Chen Wang, Yu-Ying Hung, Kuo-Bin Hong, Fang-Chung Chen, Chia-Feng Lin, Shu-Wei Chang, Jung Han, Jr-Hau He, Yu-Heng Hong, Hao-Chung Kuo
Format:	Artigo
Langue:	Inglês
Publié:	Elsevier 2024-01-01
Collection:	Next Nanotechnology
Sujets:	Color conversion InGaN Light-emitting diode Micro-LED Nanoporous DBR Quantum dot
Accès en ligne:	http://www.sciencedirect.com/science/article/pii/S2949829524000093
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