Enhancing the Responsiveness of Thermoelectric Gas Sensors with Boron-Doped and Thermally Annealed SiGe Thin Films via Low-Pressure Chemical Vapor Deposition
Thermoelectric gas sensor (THGS) devices with catalysts and Si<sub>0.8</sub>Ge<sub>0.2</sub> thin films of different boron doping levels of 10<sup>18</sup>, 10<sup>19</sup>, and 10<sup>20</sup> cm<sup>−3</sup> were fabricated, and their transport properties are investigated. SiGe films were deposite...
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| Autors principals: | , , , , |
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| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
MDPI AG
2024-05-01
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| Col·lecció: | Sensors |
| Matèries: | |
| Accés en línia: | https://www.mdpi.com/1424-8220/24/10/3058 |
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