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Growth of conductive Si-doped α-Ga2O3 by suboxide molecular-beam epitaxy

We report a two-step film-growth process using suboxide molecular-beam epitaxy (S-MBE) that produces Si-doped α-Ga2O3 with record transport properties. The method involves growing a relaxed α-(AlxGa1−x)2O3 buffer layer on m-plane sapphire at a relatively high substrate temperature (Tsub), ∼750 °C, f...

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Hoofdauteurs: Jacob Steele, Julianne Chen, Tamá Burrell, Naomi A. Pieczulewski, Debaditya Bhattacharya, Kathleen Smith, Katie Gann, Michael O. Thompson, Huili G. Xing, Debdeep Jena, David A. Muller, Michael D. Williams, M. K. Indika Senevirathna, Darrell G. Schlom
Formaat: Artigo
Taal:Inglês
Gepubliceerd in: AIP Publishing LLC 2025-10-01
Reeks:APL Materials
Online toegang:https://pubs.aip.org/aip/apm/article-pdf/doi/10.1063/5.0299750/20768473/101117_1_5.0299750.pdf
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