The Relationship between Electron Transport and Microstructure in Ge₂Sb₂Te₅ Alloy

Phase-change random-access memory (PCRAM) holds great promise for next-generation information storage applications. As a mature phase change material, Ge₂Sb₂Te₅ alloy (GST) relies on the distinct electrical properties of different states to achieve information storag...

Volledige beschrijving

Bibliografische gegevens

Hoofdauteurs:	Cheng Liu, Yonghui Zheng, Tianjiao Xin, Yunzhe Zheng, Rui Wang, Yan Cheng
Formaat:	Artigo
Taal:	Inglês
Gepubliceerd in:	MDPI AG 2023-01-01
Reeks:	Nanomaterials
Onderwerpen:	phase change memory Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> phase transition electron transport
Online toegang:	https://www.mdpi.com/2079-4991/13/3/582
Tags:	Voeg label toe Geen labels, Wees de eerste die dit record labelt!