The Relationship between Electron Transport and Microstructure in Ge₂Sb₂Te₅ Alloy

Phase-change random-access memory (PCRAM) holds great promise for next-generation information storage applications. As a mature phase change material, Ge₂Sb₂Te₅ alloy (GST) relies on the distinct electrical properties of different states to achieve information storag...

Ausführliche Beschreibung

Bibliografische Detailangaben

Hauptverfasser:	Cheng Liu, Yonghui Zheng, Tianjiao Xin, Yunzhe Zheng, Rui Wang, Yan Cheng
Format:	Artigo
Sprache:	Inglês
Veröffentlicht:	MDPI AG 2023-01-01
Schriftenreihe:	Nanomaterials
Schlagworte:	phase change memory Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> phase transition electron transport
Online-Zugang:	https://www.mdpi.com/2079-4991/13/3/582
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