Reliability Improvement from La2O3 Interfaces in Hf0.5Zr0.5O2‐Based Ferroelectric Capacitors
Abstract Further optimization of a typically reported ferroelectric capacitor comprised of a Hf0.5Zr0.5O2 ferroelectric thin film with TiN electrodes is explored by introducing an additional non‐ferroelectric La2O3 interfacial layer evaluated at different positions in the capacitor stack. The role o...
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| Principais autores: | , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Wiley-VCH
2023-03-01
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| coleção: | Advanced Materials Interfaces |
| Assuntos: | |
| Acesso em linha: | https://doi.org/10.1002/admi.202202151 |
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