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A simulated fabrication and characterization of a 65 nm floating-gate MOS transistor☆

The aim of this study was to virtual fabricate and characterize a Floating-gate MOS transistor of the 65 nm process. The fabrication process was designed and characterized using the TCAD Silvaco tools. In our work, a detailed flow and the parameters are proposed to virtual fabricate the complete Flo...

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Principais autores: Thinh Dang Cong, Phuc Ton That Bao, Trang Hoang
פורמט: Artigo
שפה:Inglês
יצא לאור: Elsevier 2023-04-01
סדרה:Ain Shams Engineering Journal
נושאים:
Floating-gate MOS
Flash memory cell
Tunneling effects
CMOS technology
Gate leakage current
TCAD tool
גישה מקוונת:http://www.sciencedirect.com/science/article/pii/S2090447922002283
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