Surface Passivation of Crystalline Silicon Wafer Using H<sub>2</sub>S Gas
We report the effects of H<sub>2</sub>S passivation on the effective minority carrier lifetime of crystalline silicon (c-Si) wafers. c-Si wafers were thermally annealed under an H<sub>2</sub>S atmosphere at various temperatures. The initial minority carrier lifetime (6.97 μs) of a c-Si wafer without...
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| Hoofdauteurs: | , , , , , |
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| Formaat: | Artigo |
| Taal: | Inglês |
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MDPI AG
2021-04-01
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| Reeks: | Applied Sciences |
| Onderwerpen: | |
| Online toegang: | https://www.mdpi.com/2076-3417/11/8/3527 |
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