Design Strategies for Optimized Bulk-Linearized MOS Pseudo-Resistor
The bulk linearization technique is a design strategy used to extend the linear region of a metal oxide semiconductor field effect transistor (MOSFET) by increasing its saturation voltage through a composite structure and a gate biasing circuit. This allows us to develop compact and flexible pseudo-...
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| Egile Nagusiak: | , , |
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| Formatua: | Artigo |
| Hizkuntza: | Inglês |
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MDPI AG
2025-08-01
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| Saila: | Micromachines |
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| Sarrera elektronikoa: | https://www.mdpi.com/2072-666X/16/8/941 |
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