Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes
Using current-voltage (I-V), capacitance-voltage (C-V), and electric-field-modulated Raman measurements, we report on the unique physics and promising technical applications associated with the formation of Schottky barriers at the interface of a one-atom-thick zero-gap semiconductor (graphene) and...
I tiakina i:
| Ngā kaituhi matua: | , , , , , |
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| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
American Physical Society
2012-01-01
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| Rangatū: | Physical Review X |
| Urunga tuihono: | http://doi.org/10.1103/PhysRevX.2.011002 |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
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