Analysis of electrical properties in lateral Schottky barrier diode based on n-GaN and AlGaN/GaN heterostructure

In this paper, the lateral Schottky barrier diodes (SBDs) with small capacitance and low turn-on voltage (Von) were fabricated on n-GaN and AlGaN/GaN heterostructure. The capacitances of lateral n-GaN SBD and lateral AlGaN/GaN SBD are 1.35 pF/mm and 0.70 pF/mm, respectively. Compared with the planar...

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Principais autores:	Honghui Liu, Zhiwen Liang, Fengge Wang, Yanyan Xu, Xien Yang, Yisheng Liang, Xin Li, Lizhang Lin, Zhisheng Wu, Yang Liu, Baijun Zhang
格式:	Artigo
語言:	Inglês
出版:	Frontiers Media S.A. 2022-11-01
叢編:	Frontiers in Physics
主題:	GaN AlGaN/GaN Schottky barrier diodes metal-induced gap states inhomogeneous SBHs
在線閱讀:	https://www.frontiersin.org/articles/10.3389/fphy.2022.1084214/full
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