Investigations of 4H‐SiC trench MOSFET with integrated high‐K deep trench and gate dielectric

Abstract This paper proposes and investigates a novel 4H‐SiC trench MOSFET (TMOS) with integrated high‐K deep trench and gate dielectric (INHK‐TMOS). The integrated high‐K (INHK) consists of a high‐K gate dielectric and an extended high‐K deep trench dielectric in the drift region. Firstly, the high...

Celý popis

Podrobná bibliografie

Hlavní autoři:	Jiafei Yao, Yuao Liu, Ang Li, Xue Han, Qing Yao, Kemeng Yang, Man Li, Jing Chen, Maolin Zhang, Jun Zhang, Yufeng Guo
Médium:	Artigo
Jazyk:	Inglês
Vydáno:	Wiley 2024-05-01
Edice:	IET Power Electronics
Témata:	trench MOSFET power semiconductor devices 4H‐SiC high‐K dielectric breakdown voltage specific on‐resistance
On-line přístup:	https://doi.org/10.1049/pel2.12700
Tagy:	Přidat tag Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!