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Investigations of 4H‐SiC trench MOSFET with integrated high‐K deep trench and gate dielectric

Abstract This paper proposes and investigates a novel 4H‐SiC trench MOSFET (TMOS) with integrated high‐K deep trench and gate dielectric (INHK‐TMOS). The integrated high‐K (INHK) consists of a high‐K gate dielectric and an extended high‐K deep trench dielectric in the drift region. Firstly, the high...

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Principais autores: Jiafei Yao, Yuao Liu, Ang Li, Xue Han, Qing Yao, Kemeng Yang, Man Li, Jing Chen, Maolin Zhang, Jun Zhang, Yufeng Guo
Format: Artigo
Sprog:Inglês
Udgivet: Wiley 2024-05-01
Serier:IET Power Electronics
Fag:
trench MOSFET
power semiconductor devices
4H‐SiC
high‐K dielectric
breakdown voltage
specific on‐resistance
Online adgang:https://doi.org/10.1049/pel2.12700
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