Analytical modeling of Schottky tunneling source impact ionization MOSFET with reduced breakdown voltage
In this paper, we have investigated a novel Schottky tunneling source impact ionization MOSFET (STS-IMOS) to lower the breakdown voltage of conventional impact ionization MOS (IMOS) and developed an analytical model for the same. In STS-IMOS there is an accumulative effect of both impact ionization...
I tiakina i:
| Ngā kaituhi matua: | , |
|---|---|
| Hōputu: | Artigo |
| Reo: | Inglês |
| I whakaputaina: |
Elsevier
2016-03-01
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| Rangatū: | Engineering Science and Technology, an International Journal |
| Ngā marau: | |
| Urunga tuihono: | http://www.sciencedirect.com/science/article/pii/S2215098615001202 |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
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