A Power MOSFET With P-Base Schottky Diode and Built-In Channel Diode for Fast Reverse Recovery
A power MOSFET with P-base Schottky diode and built-in channel diode is proposed and numerically investigated in this article. The P-base Schottky diode formed by the P-base Schottky contact is in reverse series with the P-base/N-drift junction diode. Besides, by coupling the gate of the dummy MOSFE...
שמור ב:
| Principais autores: | , , , |
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| פורמט: | Artigo |
| שפה: | Inglês |
| יצא לאור: |
IEEE
2021-01-01
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| סדרה: | IEEE Journal of the Electron Devices Society |
| נושאים: | |
| גישה מקוונת: | https://ieeexplore.ieee.org/document/9356588/ |
| תגים: |
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