A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region
A 1.2 kV SiC MOSFET with an integrated heterojunction diode and p-shield region (IHP-MOSFET) was proposed and compared to a conventional SiC MOSFET (C-MOSFET) using numerical TCAD simulation. Due to the heterojunction diode (HJD) located at the mesa region, the reverse recovery time and reverse reco...
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| Autores principales: | , , |
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| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
MDPI AG
2021-12-01
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| Colección: | Energies |
| Materias: | |
| Acceso en línea: | https://www.mdpi.com/1996-1073/14/24/8582 |
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