Analytical modeling of Schottky tunneling source impact ionization MOSFET with reduced breakdown voltage

In this paper, we have investigated a novel Schottky tunneling source impact ionization MOSFET (STS-IMOS) to lower the breakdown voltage of conventional impact ionization MOS (IMOS) and developed an analytical model for the same. In STS-IMOS there is an accumulative effect of both impact ionization...

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Bibliografiske detaljer

Principais autores:	Sangeeta Singh, P.N. Kondekar
Format:	Artigo
Sprog:	Inglês
Udgivet:	Elsevier 2016-03-01
Serier:	Engineering Science and Technology, an International Journal
Fag:	Impact ionization Schottky barrier tunneling Wentzel–Kramers–Brillouin (WKB) approximation Ionization integral (M) Subthreshold swing (SS)
Online adgang:	http://www.sciencedirect.com/science/article/pii/S2215098615001202
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