Hydrophilic thermocompression bonding of single-crystalline 3C-SiC thin film on sapphire substrate

Microelectronic devices for harsh environment applications require new wafer bonding methods that can overcome the large thermal mismatch between functional layer and supporting substrate during bonding process. This paper presents a bonding strategy that leverages the thermocompression bond formati...

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Detalhes bibliográficos

Principais autores:	Abdul Ahad Khan, Tuan-Khoa Nguyen, Abbhiraj Singh, Takahiro Namazu, Dzung Viet Dao, Yong Zhu
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Elsevier 2025-07-01
coleção:	Next Materials
Assuntos:	Silicon Carbide Sapphire Hydrophilicity Plasma activation SiC on Sapphire (SiCOS) Thermocompression bonding mechanisms
Acesso em linha:	http://www.sciencedirect.com/science/article/pii/S2949822825002631
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