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Non‐Destructive X‐Ray Imaging of Patterned Delta‐Layer Devices in Silicon

Abstract The progress of miniaturization in integrated electronics has led to atomic and nanometer‐sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as P and As. However, the ability to non‐destructively obtain ato...

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Tallennettuna:
Päätekijät: Nicolò D'Anna, Dario Ferreira Sanchez, Guy Matmon, Jamie Bragg, Procopios C. Constantinou, Taylor J.Z. Stock, Sarah Fearn, Steven R. Schofield, Neil J. Curson, Marek Bartkowiak, Y. Soh, Daniel Grolimund, Simon Gerber, Gabriel Aeppli
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Wiley-VCH 2023-05-01
Sarja:Advanced Electronic Materials
Aiheet:
doped silicon devices
non‐destructive sub‐surface imaging
X‐ray fluorescence
Linkit:https://doi.org/10.1002/aelm.202201212
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