Tuning the electronic properties of defect-rich MoS2
Transition metal dichalcogenides (TMDCs), including molybdenum disulfide (MoS2), have emerged as a promising candidate for novel semiconducting devices. However, in many cases structural defects significantly affect the electronic properties of the material. The present study utilizes angle-resolved...
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| Principais autores: | , , , , , , , |
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| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Beilstein-Institut
2026-06-01
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| coleção: | Beilstein Journal of Nanotechnology |
| Assuntos: | |
| Acesso em linha: | https://doi.org/10.3762/bjnano.17.56 |
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