Non‐Destructive X‐Ray Imaging of Patterned Delta‐Layer Devices in Silicon
Abstract The progress of miniaturization in integrated electronics has led to atomic and nanometer‐sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as P and As. However, the ability to non‐destructively obtain ato...
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| Asıl Yazarlar: | , , , , , , , , , , , , , |
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| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Wiley-VCH
2023-05-01
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| Seri Bilgileri: | Advanced Electronic Materials |
| Konular: | |
| Online Erişim: | https://doi.org/10.1002/aelm.202201212 |
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