Hybrid ferroelectric-ionic memristive hardware for high scalability in-memory computing

Abstract In-memory computing using two-terminal memristors offers a promising route to reduce the energy demands of data-intensive computing. However, current devices scale poorly due to sneak currents and materials that are incompatible with standard complementary metal-oxide-semiconductor and very...

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Autors principals:	Jeong-Han Kim, Wonjun Shin, Ryun-Han Koo, Jangsaeng Kim, Eugene Park, Piush Behera, Sojin Kim, Jinseok Hong, Feras Al-Dirini, Been Kwak, Jiwon You, Jiseong Im, Dooyong Koh, Yejin Hong, Qinyuan Xue, Hyun-Min Kim, Hyunho Seok, Youngchan Cho, Hwiin Ju, Wooje Jung, Kyunghwan Lee, Daewon Ha, Jong-Ho Lee, Seung-Yong Lee, Deok-Hwang Kwon, Frances M. Ross, Youngho Kang, Suraj S. Cheema, Daewoong Kwon
Format:	Artigo
Idioma:	Inglês
Publicat:	Nature Portfolio 2026-05-01
Col·lecció:	Nature Communications
Accés en línia:	https://doi.org/10.1038/s41467-026-72103-6
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