Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates

In this study, an AlGaN/GaN high-electron-mobility transistor (HEMT) was grown through metal organic chemical vapor deposition on a Qromis Substrate Technology (QST). The GaN on the QST device exhibited a superior heat dissipation performance to the GaN on a Si device because of the higher thermal c...

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Detalhes bibliográficos

Principais autores:	Chong-Rong Huang, Hsien-Chin Chiu, Chia-Hao Liu, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Tien Chen, Kuo-Jen Chang
Formato:	Artigo
Idioma:	Inglês
Publicado em:	MDPI AG 2021-10-01
coleção:	Membranes
Assuntos:	QST substrate back-barrier layer high thermal conductivity
Acesso em linha:	https://www.mdpi.com/2077-0375/11/11/848
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