Atomic layer deposited HfZrO4-based memristive devices: annealing effect and multilevel storage capability

In this work, an atomic layer deposited (ALD) Hf1Zr1O4 (HZO)-based switching layer is investigated in the device structure of a TiN/HZO/TiN. The thickness of the switching layer is ∼10 nm, which was grown by the thermal ALD at 250 °C by a super-cycle approach. Both pristine and annealed (400 °C for...

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Detalhes bibliográficos

Principais autores:	Rahul Ramesh, Spyros Stathopoulos, Sanjay Kumar, Hannah Levene, Deepika Yadav, Andreas Tsiamis, Themis Prodromakis
Formato:	Artigo
Idioma:	Inglês
Publicado em:	Frontiers Media S.A. 2026-01-01
coleção:	Frontiers in Nanotechnology
Assuntos:	annealing effect atomic layer deposition ferroelectric memristor HfZrO4 resistive switching
Acesso em linha:	https://www.frontiersin.org/articles/10.3389/fnano.2026.1729291/full
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