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Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells

The p-GaN/i-InxGa1−xN/n-GaN double-heterostructure photovoltaic (PV) cells have been fabricated and the theoretical photovoltaic properties were also calculated in this work. From theoretical simulation, higher efficiency can be obtained in GaN/InGaN double-heterostructure photovoltaic cells with hi...

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Detaylı Bibliyografya
Asıl Yazarlar: Ming-Hsien Wu, Sheng-Po Chang, Shoou-Jinn Chang, Ray-Hua Horng, Wen-Yih Liao, Ray-Ming Lin
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: Wiley 2012-01-01
Seri Bilgileri:International Journal of Photoenergy
Online Erişim:http://dx.doi.org/10.1155/2012/206174
Etiketler: Etiketle
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