Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells
The p-GaN/i-InxGa1−xN/n-GaN double-heterostructure photovoltaic (PV) cells have been fabricated and the theoretical photovoltaic properties were also calculated in this work. From theoretical simulation, higher efficiency can be obtained in GaN/InGaN double-heterostructure photovoltaic cells with hi...
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| Autors principals: | , , , , , |
|---|---|
| Format: | Artigo |
| Idioma: | Inglês |
| Publicat: |
Wiley
2012-01-01
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| Col·lecció: | International Journal of Photoenergy |
| Accés en línia: | http://dx.doi.org/10.1155/2012/206174 |
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